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| Power Transistors 2SD2051 Silicon NPN epitaxial planar type Darlington For low-frequency amplification 0.70.1 Unit: mm 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 7.50.2 s Features q q q 4.0 High foward current transfer ratio hFE Incorporating a built-in zener diode Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 6010 6010 5 2.5 1.6 12 2.0 150 -55 to +150 Unit V V V A A W C C 16.70.3 3.10.1 1.40.1 1.30.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.00.5 0.5 -0.1 0.80.1 +0.2 2.540.25 5.080.5 1 2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) 3 Internal Connection C B s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency (TC=25C) Symbol ICBO IEBO VCBO VCEO VEBO hFE * E Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCE = 10V, IC = 1.0A IC = 1.0A, IB = 1.0mA IC = 1.0A, IB = 1.0mA VCE = 10V, IC = 10mA, f = 200MHz min typ max 1 1 Unit A A V V V 50 50 5 4000 70 70 40000 1.5 2.2 V V MHz VCE(sat) VBE(sat) fT 200 *h FE Rank classification Q R S Rank hFE 4000 to 10000 8000 to 20000 16000 to 40000 1 Power Transistors PC -- Ta 4 1.2 Without heat sink 1.0 3 TC=25C 2SD2051 IC -- VCE IB=100A 90A 80A 70A 60A 0.8 50A 0.6 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=1000 30 10 3 1 TC=-25C 0.3 100C 0.1 0.03 0.01 0.01 0.03 Collector power dissipation PC (W) 2 Collector current IC (A) 25C 0.4 40A 0.2 1 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 106 hFE -- IC 20 Cob -- VCB Collector output capacitance Cob (pF) VCE=10V 18 16 14 12 10 8 6 4 2 0 IE=0 f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Forward current transfer ratio hFE 105 25C TC=100C -25C TC=-25C 100C 25C 104 103 102 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) 2 |
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